The transresistance and Hall transresistance of dirty two-dimensional bilayer systems in the presence of tunneling bridges (pinholes) are studied theoretically. We find, at weak magnetic field, a nonzero Hall transresistance. In a geometry where the pinholes are concentrated in the middle of the sample, a quantum process gives the dominant contribution to both the ordinary transresistance and the Hall transresistance. Arising from the interplay between Coulomb repulsion, disorder, and tunneling, the quantum contribution increases in a singular way as the temperature decreases.

• Received 30 April 1999

DOI:https://doi.org/10.1103/PhysRevB.60.5679