Abstract
The transition-metal titanium (Ti) as an extrinsic impurity in the wide-band-gap semiconductor silicon carbide (SiC) is studied, applying deep-level transient spectroscopy on -implanted 4H and 6H SiC epitaxial layers. Two Ti centers with energy positions -(117±8) meV and -(160±10) meV, respectively, are observed in the 4H polytype. These levels are assigned to the ionized Ti acceptor () residing at hexagonal and cubic Si lattice sites. For the 6H SiC polytype, the Ti acceptor levels are assumed to be resonant in the conduction band.
DOI:https://doi.org/10.1103/PhysRevB.55.13618
©1997 American Physical Society