Abstract
A detailed time-resolved photoluminescence study of the deep-donor bound-exciton-emission band frequently observed below the acceptor bound-exciton transition, in high-purity -type InP grown by chemical-beam epitaxy, has been performed. The decay lifetimes across the broad emission band increase with increasing exciton localization energy. A theory developed by Rashba and Gurgenishvili [Fiz. Tverd. Tela (Leningrad) 4, 1029 (1962)] [Sov. Phys. Solid State 4, 759 (1962)] which predicts a three-halves dependence of the exciton-localization energy on the bound-exciton lifetimes has been observed in InP.
- Received 12 June 1995
DOI:https://doi.org/10.1103/PhysRevB.53.3627
©1996 American Physical Society
