Monte Carlo simulations of the hopping transport of charge carriers in model disordered systems at high fields are performed. Diagonal disorder is represented by a Gaussian density of states while binary bond disorder is used as a model of off-diagonal disorder. Diagonal disorder and off-diagonal disorder are shown to act synergetically on the hopping motion at high fields. It is demonstrated that, contrary to the usual assumption, off-diagonal disorder can significantly affect the activation energy of the hopping transport.

• Received 14 November 1994

DOI:https://doi.org/10.1103/PhysRevB.51.6947