Destruction of the quantum Hall effect with increasing disorder

J. E. Furneaux, S. V. Kravchenko, Whitney E. Mason, G. E. Bowker, and V. M. Pudalov
Phys. Rev. B 51, 17227 – Published 15 June 1995
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Abstract

We report experimental studies of disorder-induced transitions between quantum Hall, metallic, and insulating states in a very dilute two-dimensional electron system in silicon at a magnetic field corresponding to Landau-level filling factor ν=1. At low disorder, the lowest extended state at ν=1 is below the Fermi energy so that the system is in the quantum Hall state. Our data show that with increasing disorder (but at constant electron density and magnetic field), the extended state does not disappear but floats up in energy so that the system becomes insulating. As the extended state crosses the Fermi energy, the conductivity σxxe2/2h has a temperature dependence characteristic of a metallic system.

  • Received 30 January 1995

DOI:https://doi.org/10.1103/PhysRevB.51.17227

©1995 American Physical Society

Authors & Affiliations

J. E. Furneaux, S. V. Kravchenko, Whitney E. Mason, and G. E. Bowker

  • Laboratory for Electronic Properties of Materials and Department of Physics and Astronomy, University of Oklahoma, Norman, Oklahoma 73019

V. M. Pudalov

  • Institute for High Pressure Physics, Troitsk, 142092 Moscow district, Russia

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Vol. 51, Iss. 23 — 15 June 1995

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