Tight-binding molecular-dynamics study of transition-metal clusters

Madhu Menon, John Connolly, Nectarios Lathiotakis, and Antonis Andriotis
Phys. Rev. B 50, 8903 – Published 15 September 1994
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Abstract

An efficient semiempirical molecular-dynamics technique to treat interactions in transition metals is introduced. The method is based on the tight-binding scheme incorporating d delectrons. Optimized geometries are obtained using this scheme for Nin clusters for n up to 10. The expected general trends for the various cluster properties are well described by our results. Important qualitative differences from semiconductor clusters are observed. The technique appears to be promising in modeling interactions in alloys containing semiconductor and metal atoms.

  • Received 15 June 1994

DOI:https://doi.org/10.1103/PhysRevB.50.8903

©1994 American Physical Society

Authors & Affiliations

Madhu Menon

  • Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506-0055
  • Center for Computational Sciences, University of Kentucky, Lexington, Kentucky 40506-0055

John Connolly

  • Center for Computational Sciences, University of Kentucky, Lexington, Kentucky 40506-0055

Nectarios Lathiotakis and Antonis Andriotis

  • Institute of Electronic Structure and Laser, Foundation for Research Technology–Hellas, P.O. Box 1527, Heraklion, 71110 Crete, Greece

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Issue

Vol. 50, Iss. 12 — 15 September 1994

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