Structural and electronic properties of K/Si(100)2×1

E. G. Michel, P. Pervan, G. R. Castro, R. Miranda, and K. Wandelt
Phys. Rev. B 45, 11811 – Published 15 May 1992
PDFExport Citation

Abstract

The interface K/Si(100)2×1 has been investigated by using a variety of surface techniques sensitive to both structural and electronic properties. The adsorption site of potassium was determined by using Xe titration and Xe photoelectron spectroscopy. Potassium atoms are preferentially adsorbed between the rows of dimers of the 2×1 reconstruction (cave-valley sites). Controversy exists about the degree of ionicity of the K-Si bond, and the way the surface is metallized after K adsorption. Using work-function change, thermal desorption, and ultraviolet photoemission measurements, we determined that the potassium overlayer has metallic character above 0.5-monolayer (ML) coverage. We have studied by means of photoemission of adsorbed xenon the way the surface potential is affected by K adsorption. The charge transfer from K to Si gives rise to a reduction of the local work function at sites close to K atoms. In addition, a long-range reduction affects the whole surface from coverages of 0.2 ML on.

  • Received 1 July 1991

DOI:https://doi.org/10.1103/PhysRevB.45.11811

©1992 American Physical Society

Authors & Affiliations

E. G. Michel, P. Pervan, G. R. Castro, R. Miranda, and K. Wandelt

  • Institut für Physikalische und Theoretische Chemie, Universität Bonn, Wegelerstrasse, 12 D-5300 Bonn 1, Federal Republic of Germany

References (Subscription Required)

Click to Expand
Issue

Vol. 45, Iss. 20 — 15 May 1992

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×