1/f noise in bismuth consistent with defect motion

C. D. Keener and M. B. Weissman
Phys. Rev. B 44, 9178 – Published 1 November 1991
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Abstract

The temperature dependence of the 1/f noise in bismuth films and whiskers was studied. Undamaged whiskers had less normalized noise power than films. Ion milling increased the normalized noise power in two whiskers to values close to those of the films. None of the whiskers showed the clear peak in the noise-versus-temperature curve found in the films. In the films, under some conditions low magnetic fields reduced the resistance fluctuations, despite the positive magnetoresistance. The frequency of the peak in the noise power shifted as a function of temperature, fitting an Arrhenius law with reasonable parameters for defect motion.

  • Received 27 June 1991

DOI:https://doi.org/10.1103/PhysRevB.44.9178

©1991 American Physical Society

Authors & Affiliations

C. D. Keener and M. B. Weissman

  • Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801

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Issue

Vol. 44, Iss. 17 — 1 November 1991

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