Stimulated Raman scattering in a magnetized centrosymmetric semiconductor

A. Neogi and S. Ghosh
Phys. Rev. B 44, 13074 – Published 15 December 1991
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Abstract

By considering the hydrodynamic model of semiconductor plasmas, we performed an analytical investigation of stimulated Raman scattering (SRS) of an electromagnetic pump wave in a transversely magnetized centrosymmetric semiconductor arising from electron-density perturbations and molecular vibrations of the medium both produced at the transverse-optical-phonon frequency. Assuming that the origin of SRS lies in the third-order susceptibility of the medium, we investigated the growth of the Stokes mode. The dependence of the stimulated Raman gain on the external magnetic field strength is reported. The possibility of the occurrence of optical phase conjugation via SRS has also been studied. The steady-state Raman gain is found to be greatly enhanced by the presence of the strong external dc magnetic field.

  • Received 6 September 1991

DOI:https://doi.org/10.1103/PhysRevB.44.13074

©1991 American Physical Society

Authors & Affiliations

A. Neogi and S. Ghosh

  • School of Studies in Physics, Vikram University, Ujjain 456010, India

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Issue

Vol. 44, Iss. 23 — 15 December 1991

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