We report new measurements of circularly polarized recombination radiation from highly doped p-type GaAs emitted under impact of longitudinally polarized electrons with an initial kinetic energy varied between 2 and 10 eV. The work function of the target crystal is lowered by cesiation and oxidation of the surface. The results are discussed and compared with our earlier measurements on a clean GaAs crystal surface and with photoluminescence data.

• Received 19 March 1990

DOI:https://doi.org/10.1103/PhysRevB.42.7242