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Cs and O adsorption on Si(100) 2×1: A model system for promoted oxidation of semiconductors

J. E. Ortega, E. M. Oellig, J. Ferrón, and R. Miranda
Phys. Rev. B 36, 6213(R) – Published 15 October 1987
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Abstract

We present Auger-electron spectroscopy, low-energy electron diffraction, and Δφ measurements of Cs adsorption on Si(100) and subsequent oxidation of the substrate. Our data provide evidence against complete charge transfer from the alkali metal to Si as proposed recently. The amount of SiO2 produced by alkali-metal-promoted low-temperature oxidation of silicon is found to be strictly proportional to the alkali-metal coverage, which, together with measured changes in the work function during oxidation, allows us to question some of the current mechanisms put forward to explain this phenomenom.

  • Received 6 July 1987

DOI:https://doi.org/10.1103/PhysRevB.36.6213

©1987 American Physical Society

Authors & Affiliations

J. E. Ortega, E. M. Oellig, J. Ferrón*, and R. Miranda

  • Departamento de Física de la Materia Condensada (C-III), Facultad de Ciencias, Universidad Autónoma de Madrid, Cantoblanco, E-28049 Madrid, Spain

  • *Permanent address: Instituto de Desarrollo Tecnológico para la Industria Química (Intec), Güemes 3450, 3000 Santa Fé, Sante Fé, Argentina.

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Issue

Vol. 36, Iss. 11 — 15 October 1987

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