Many-body effects in the paramagnetic and antiferromagnetic states of the (111) silicon face

A. Muoz, F. Flores, C. Tejedor, and E. Louis
Phys. Rev. B 33, 537 – Published 1 January 1986
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Abstract

The electron density of surface states has been calculated for both the paramagnetic and the antiferromagnetic states of Si(111). Many-body effects associated with correlation and electron-phonon coupling are included. Our results have been obtained by using a self-consistent tight-binding approach, a Bethe-lattice method, and Green-function techniques. The paramagnetic phase shows a very narrow Kondo-like peak at the Fermi level EF, two satellites at EF±0.2 eV, and two broader peaks at EF±0.8 eV. The antiferromagnetic phase shows two peaks at EF±0.8 eV and two others at EF±0.4 eV. In this case the energy gap of 0.6 eV due to correlation effects is reduced by electron-phonon coupling up to 0.25 eV.

  • Received 20 May 1985

DOI:https://doi.org/10.1103/PhysRevB.33.537

©1986 American Physical Society

Authors & Affiliations

A. Muoz, F. Flores, and C. Tejedor

  • Departamento de Física del Estado Sólido, Universidad Autónoma, Cantoblanco, 28049 Madrid, Spain

E. Louis

  • Departamento de Física, Facultad de Ciencias, Universidad de Alicante, Apartado Postal 99, 03080 Alicante, Spain and Endasa, Centro de Investigación y Desarrollo, Apartado Postal 25, 03080 Alicante, Spain

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Vol. 33, Iss. 1 — 1 January 1986

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