Abstract
The electrical resistance of Sm as a function of temperature and pressure has been measured in the range and kbar. The behavior of changes continuously from that of a narrow gap semiconductor to that of a metal in the range of kbar. The dependence of on and can be analyzed phenomenologically within the context of a thermal activation model with an activation energy that decreases linearly with pressure from ∼33 K at zero pressure to zero at ∼70 kbar. The data resemble those of SmS and SmSe under pressure and suggest a general behavior of for intermediate-valence Sm compounds.
- Received 20 July 1983
DOI:https://doi.org/10.1103/PhysRevB.28.7397
©1983 American Physical Society