Abstract
An analytical expression involving the electron effective mass in the transverse direction has been obtained for a semiconductor superlattice. Numerical results presented indicate that the transverse mass depends on electron energy, and in most cases has a value close to the energy-dependent electron effective mass in the layer having the smaller band gap.
- Received 24 August 1979
DOI:https://doi.org/10.1103/PhysRevB.21.5857
©1980 American Physical Society