Abstract
A simple formalism is developed for the analysis of x-ray photoelectron spectroscopy line shapes in semimetals and semiconductors. It is shown to account for experimental line shapes in a variety of materials, including Bi, InSb, and some larger-gap, layer-structure compounds.
- Received 18 April 1977
DOI:https://doi.org/10.1103/PhysRevB.16.2613
©1977 American Physical Society