This reply to comments by Schröter, Labusch, and Haasen, rebuts the arguments put forward that our model to account for the electronic effects on dislocation velocity in semiconductors is basically unacceptable. We have clarified the basic differences between their model and ours and have suggested means for a possible critical test between the two models.

• Received 15 October 1976

DOI:https://doi.org/10.1103/PhysRevB.15.4124