Anisotropic transport and multiple topology in quasi-one-dimensional ternary telluride NbNiTe5

Wen-He Jiao, Shaozhu Xiao, Wei Liu, Yi Liu, Hang-Qiang Qiu, Keqi Xia, Shaolong He, Yuke Li, Guang-Han Cao, and Xiaofeng Xu
Phys. Rev. B 107, 195124 – Published 12 May 2023
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Abstract

Topological quantum materials, which feature nontrivial band topology, have been one of the most attractive research topics in condensed-matter physics in recent decades. The low-dimensional topologically nontrivial materials are especially appealing due to the rich implications for topological physics and the potential applications in next-generation spintronic devices. Here, we report the crystal growth, anisotropic magnetotransport, Hall effect, and quantum de Haas–van Alphen (dHvA) oscillations of a quasi-one-dimensional ternary telluride NbNiTe5. The pronounced dHvA oscillations under Hb reveal three major oscillation frequencies Fα=136.41T, Fβ=240.34T, and Fγ=708.03 T and the associated light effective masses of charge carriers. From the angular dependence of dHvA oscillations, we have revealed the identified frequencies exhibit anisotropic character, all of which arise from the holelike Fermi surface sheets formed by band 1 (Fα and Fβ) and band 2 (Fγ) by comparing with the Fermi surface calculations. First-principles calculations demonstrate that NbNiTe5 is a candidate of multiple topological material. In addition to the nonsymmorphic symmetry-protected nodal lines and band inversion (anticrossing) induced topological surface states, a ladder of topological gaps with the coexistence of strong and weak topology and a series of induced topological surface states are also identified.

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  • Received 18 January 2023
  • Revised 20 April 2023
  • Accepted 20 April 2023

DOI:https://doi.org/10.1103/PhysRevB.107.195124

©2023 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Wen-He Jiao1,*, Shaozhu Xiao2,†, Wei Liu2, Yi Liu1, Hang-Qiang Qiu3, Keqi Xia4, Shaolong He2, Yuke Li4, Guang-Han Cao5,6, and Xiaofeng Xu1,‡

  • 1Key Laboratory of Quantum Precision Measurement of Zhejiang Province, Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China
  • 2Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
  • 3Department of Applied Physics, Zhejiang University of Science and Technology, Hangzhou 310023, China
  • 4School of Physics and Hangzhou Key Laboratory of Quantum Matters, Hangzhou Normal University, Hangzhou 311121, China
  • 5School of Physics, Interdisciplinary Center for Quantum Information, and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310058, China
  • 6Collaborative Innovation Centre of Advanced Microstructures, Nanjing 210093, China

  • *whjiao@zjut.edu.cn
  • xiaoshaozhu@nimte.ac.cn
  • xuxiaofeng@zjut.edu.cn

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Issue

Vol. 107, Iss. 19 — 15 May 2023

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