Anisotropy of the in-plane g-factor of electrons in HgTe quantum wells

G. M. Minkov, V. Ya. Aleshkin, O. E. Rut, A. A. Sherstobitov, S. A. Dvoretski, N. N. Mikhailov, and A. V. Germanenko
Phys. Rev. B 101, 085305 – Published 24 February 2020

Abstract

The results of experimental studies of the Shubnikov–de Haas (SdH) effect in the (013)HgTe/Hg1xCdxTe quantum wells (QWs) of electron type of conductivity both with normal and inverted energy spectrum are reported. Comprehensive analysis of the SdH oscillations measured for the different orientations of magnetic field relative to the quantum well plane and crystallographic exes allows us to investigate the anisotropy of the Zeeman effect. For the QWs with inverted spectrum, it has been shown that the ratio of the spin splitting to the orbital one is strongly dependent not only on the orientation of the magnetic field relative to the QW plane but also on the orientation of the in-plane magnetic field component relative to crystallographic axes laying in the QW plane that implies the strong anisotropy of in-plane g-factor. In the QW with normal spectrum, this ratio strongly depends on the angle between the magnetic field and the normal to the QW plane and reveals a very slight anisotropy in the QW plane. To interpret the data, the Landau levels in the tilted magnetic field are calculated within the framework of four-band kP model. It is shown that the experimental results can be quantitatively described only with taking into account the interface inversion asymmetry.

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  • Received 20 August 2019
  • Revised 4 February 2020
  • Accepted 5 February 2020

DOI:https://doi.org/10.1103/PhysRevB.101.085305

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

G. M. Minkov1,2, V. Ya. Aleshkin3,4, O. E. Rut1, A. A. Sherstobitov1,2, S. A. Dvoretski5, N. N. Mikhailov5,6, and A. V. Germanenko1

  • 1School of Natural Sciences and Mathematics, Ural Federal University, 620002 Ekaterinburg, Russia
  • 2M. N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620137 Ekaterinburg, Russia
  • 3Institute for Physics of Microstructures RAS, 603087 Nizhny Novgorod, Russia
  • 4Lobachevsky University of Nizhny Novgorod, 603950 Nizhny Novgorod, Russia
  • 5Institute of Semiconductor Physics RAS, 630090 Novosibirsk, Russia
  • 6Department of Physics, Novosibirsk State University, Novosibirsk 630090, Russia

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Issue

Vol. 101, Iss. 8 — 15 February 2020

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