Electronic ground state in bilayer graphene with realistic Coulomb interactions

Jia Ning Leaw, Ho-Kin Tang, Pinaki Sengupta, Fakher F. Assaad, Igor F. Herbut, and Shaffique Adam
Phys. Rev. B 100, 125116 – Published 6 September 2019

Abstract

Both insulating and conducting electronic behaviors have been experimentally seen in clean bilayer graphene samples at low temperature, and there is still no consensus on the nature of the interacting ground state at half filling and in the absence of a magnetic field. Theoretically, several possibilities for the insulating ground states have been predicted for weak interaction strength. However, a recent renormalization-group calculation on a Hubbard model for charge-neutral bilayer graphene with short-range interactions suggests the emergence of low-energy Dirac fermions that would stabilize the metallic phase for weak interactions. Using a nonperturbative projective quantum Monte Carlo, we calculate the ground state for bilayer graphene using a realistic model for the Coulomb interaction that includes both short-range and long-range contributions. We find that a finite critical on-site interaction is needed to gap bilayer graphene and the transition belongs to the Gross-Neveu universality class, thereby confirming the Hubbard model expectations even in the presence of a long-range Coulomb potential, in agreement with our theoretical analysis. In addition, we also find that the critical on-site interactions necessary to destabilize the metallic ground state decrease with increasing interlayer coupling.

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  • Received 15 March 2019
  • Revised 16 August 2019

DOI:https://doi.org/10.1103/PhysRevB.100.125116

©2019 American Physical Society

Physics Subject Headings (PhySH)

  1. Research Areas
  1. Physical Systems
Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Jia Ning Leaw and Ho-Kin Tang

  • Department of Physics and Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, 117546 Singapore, Singapore

Pinaki Sengupta

  • Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, 117546 Singapore, Singapore and School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, 637371 Singapore, Singapore

Fakher F. Assaad

  • Institut für Theoretische Physik und Astrophysik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

Igor F. Herbut

  • Department of Physics, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada

Shaffique Adam

  • Department of Physics and Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, 117546 Singapore, Singapore and Yale-NUS College, 16 College Avenue West, 138614 Singapore, Singapore

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Issue

Vol. 100, Iss. 12 — 15 September 2019

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