Defect Physics, Delithiation Mechanism, and Electronic and Ionic Conduction in Layered Lithium Manganese Oxide Cathode Materials

Khang Hoang
Phys. Rev. Applied 3, 024013 – Published 24 February 2015

Abstract

Layered LiMnO2 and Li2MnO3 are of great interest for lithium-ion battery cathodes because of their high theoretical capacities. The practical application of these materials is, however, limited due to poor electrochemical performance. We herein report a comprehensive first-principles study of defect physics in LiMnO2 and Li2MnO3 using hybrid density-functional calculations. We find that manganese antisites have low formation energies in LiMnO2 and may act as nucleation sites for the formation of impurity phases. The antisites can also occur with high concentrations in Li2MnO3; however, unlike in LiMnO2, they can be eliminated by tuning the experimental conditions during preparation. Other intrinsic point defects may also occur and have an impact on the materials’ properties and functioning. An analysis of the formation of lithium vacancies indicates that lithium extraction from LiMnO2 is associated with oxidation at the manganese site, resulting in the formation of manganese small hole polarons; whereas in Li2MnO3 the intrinsic delithiation mechanism involves oxidation at the oxygen site, leading to the formation of bound oxygen hole polarons ηO+. The layered oxides are found to have no or negligible bandlike carriers, and they cannot be doped n or p type. The electronic conduction proceeds through hopping of hole and/or electron polarons; the ionic conduction occurs through lithium monovacancy and/or divacancy migration mechanisms. Since ηO+ is not stable in the absence of negatively charged lithium vacancies in bulk Li2MnO3, the electronic conduction near the start of delithiation is likely to be poor. We suggest that the electronic conduction associated with ηO+ and, hence, the electrochemical performance of Li2MnO3 can be improved through nanostructuring and/or ion substitution.

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  • Received 15 December 2014

DOI:https://doi.org/10.1103/PhysRevApplied.3.024013

© 2015 American Physical Society

Authors & Affiliations

Khang Hoang*

  • Center for Computationally Assisted Science and Technology, North Dakota State University, Fargo, North Dakota 58108, USA

  • *khang.hoang@ndsu.edu

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Vol. 3, Iss. 2 — February 2015

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