Abstract
The Hall coefficient and electrical resistivity have been measured on single-crystal specimens of -type Sn between 80 and 900°K. Data were obtained on samples in the "as grown" state, as well as on crystals which were thermally equilibrated in oxygen. A single-donor-level analysis on heat-treated crystals with donor concentrations () between 1× and 5× resulted in values of the "density-of-states" effective mass . Values of the donor ionization energy were found to decrease with increasing . At infinite dilution has an estimated value of 0.15 eV. Room-temperature thermoelectric-power measurements resulted in calculated values of between 0.12 and . Antimony-doped crystals of Sn with appeared to be degenerate above 80°K. The low-temperature Hall mobility was found to decrease with decreasing donor concentration. A qualitative treatment of the data appears consistent with the hypothesis of impurity-level transport. Mobility above 300°K was analyzed by considering polar-optical modes of vibration as being the dominant lattice scattering mechanism. Both the perturbation and intermediate-coupling theories were in reasonable agreement with experimental values using a Debye temperature °K.
- Received 13 May 1965
DOI:https://doi.org/10.1103/PhysRev.140.A304
©1965 American Physical Society