Local Pressure-Induced Metallization of a Semiconducting Carbon Nanotube in a Crossed Junction

L. Vitali, M. Burghard, P. Wahl, M. A. Schneider, and K. Kern
Phys. Rev. Lett. 96, 086804 – Published 3 March 2006

Abstract

The electronic and vibrational density of states of a semiconducting carbon nanotube in a crossed junction was investigated by elastic and inelastic scanning tunneling spectroscopy. The strong radial compression of the nanotube at the junction induces local metallization spatially confined to a few nanometers. The local electronic modifications are correlated with the observed changes in the radial breathing and G band phonon modes, which react very sensitively to local mechanical deformation. In addition, the experiments reveal the crucial contribution of the image charges to the contact potential at nanotube-metal interfaces.

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  • Received 23 May 2005

DOI:https://doi.org/10.1103/PhysRevLett.96.086804

©2006 American Physical Society

Authors & Affiliations

L. Vitali, M. Burghard, P. Wahl, M. A. Schneider, and K. Kern

  • Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany

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Issue

Vol. 96, Iss. 8 — 3 March 2006

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