High-temperature thermoelectric performance of heavily doped PbSe

David Parker and David J. Singh
Phys. Rev. B 82, 035204 – Published 8 July 2010

Abstract

We present a model calculation, employing first-principles calculations as well as empirical data, which suggests that properly hole-doped bulk PbSe may show a Seebeck coefficient as high as 230μV/K, in a temperature regime in which the lattice thermal conductivity is rather small. It may therefore show a figure-of-merit ZT as high as 2 for temperatures of 1000 K. Heavily doped p-type PbSe may offer better thermoelectric performance than the sister material, optimized PbTe, for high-temperature applications such as power generation.

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  • Received 14 May 2010

DOI:https://doi.org/10.1103/PhysRevB.82.035204

©2010 American Physical Society

Authors & Affiliations

David Parker and David J. Singh

  • Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, Tennessee 37831, USA

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Issue

Vol. 82, Iss. 3 — 15 July 2010

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