Effect of pressure and substitution for Yb on the first-order valence transition in YbInCu4

W. Zhang, N. Sato, K. Yoshimura, A. Mitsuda, T. Goto, and K. Kosuge
Phys. Rev. B 66, 024112 – Published 15 July 2002
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Abstract

Single-crystalline samples of YbInCu4 and its partially substituted compounds by Y and Lu were synthesized by the flux method. The temperature dependence of the magnetic susceptibility from 2 to 320 K in the magnetic field of 0.5 T and the high-field magnetization up to 41 T under various fixed pressures were measured in order to investigate the effect of substitution, inherent chemical pressure, and external pressure on the first-order valence transition of YbInCu4. Substitution of Yb by Y or Lu results in a small increase or decrease of the lattice parameter, while both systems show a steep decrease of transition temperature (Tv) and transition magnetic field (Hv) with substitution, resulting in suppression of the valence transition around x=0.30 for Yb1xYxInCu4(0<~x<~0.3) and x=0.15 for Yb1xLuxInCu4(0<~x<~0.15). The effect of pressure on Hv of the pure and Y-substituted YbInCu4 is reported by dHv/dP1T/kbar, with a suppression of the valence transition of Yb0.8Y0.2InCu4 at the pressure of 8 kbar. The effect of inherent chemical pressure is very small compared with the intrinsic effect of substitution. The decreasing of Kondo temperature TK(1/χ0) below Tv resulting from the substitution for the Yb lattice is discussed as an important factor affecting the valence transition of YbInCu4.

  • Received 12 July 2001

DOI:https://doi.org/10.1103/PhysRevB.66.024112

©2002 American Physical Society

Authors & Affiliations

W. Zhang1, N. Sato1, K. Yoshimura1, A. Mitsuda2,*, T. Goto2, and K. Kosuge1

  • 1Department of Chemistry, Graduate School of Science, Kyoto University, Kyoto 606-8502, Japan
  • 2Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan

  • *Present address: Department of Physics, Toyama University, 3190 Gofuku, Toyama 930-8555, Japan.

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Vol. 66, Iss. 2 — 1 July 2002

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