Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices

H. X. Tang, R. K. Kawakami, D. D. Awschalom, and M. L. Roukes

Phys. Rev. Lett. 90, 107201 – Published 12 March 2003

Abstract

Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is 4 orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.

Received 5 April 2002

DOI:https://doi.org/10.1103/PhysRevLett.90.107201

Authors & Affiliations

H. X. Tang¹, R. K. Kawakami², D. D. Awschalom², and M. L. Roukes¹

¹Condensed Matter Physics 114-36, California Institute of Technology, Pasadena, California 91125
²Department of Physics, University of California, Santa Barbara, California 93106

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand

Issue

Vol. 90, Iss. 10 — 14 March 2003

Reuse & Permissions

Access Options

Author publication services for translation and copyediting assistance advertisement

Physical Review Letters