Abstract
The aim of this work is to present a quantitative analysis of features involved in recovery during annealing of deformed Tantalum. In pure metals where crystalline defects usually have high mobility, dislocation annihilation and rearrangement occur to a great extent prior to recrystallization. Therefore a complete understanding of recrystallization cannot be accomplished without an advanced knowledge of the recovery phenomenon. Depending on whether dislocations induce a measurable curvature in the crystal lattice or not, they are called Geometrically Necessary Dislocations (GNDs) or Statistically Stored Dislocations (SSDs) respectively. In the present work only GNDs are considered. For this purpose electron backscatter diffraction (EBSD) is an advantageous technique to obtain statistically representative results when compared to Transmission Electron Microscopy (TEM). However, a quantitative analysis of GNDs from EBSD data is not straightforward. Since local misorientations are induced by the curvature of the crystal lattice caused by GNDs, GNDs analysis can be done using local misorientations. However the values obtained from this analysis are step size dependent and influenced by the measurement noise. Reasoning on the basis that when the step size tends to zero, local misorientation should also tend to zero, measurement noise can be estimated [1]. The measurement noise appears to notably be very much dependent on the amplitude of local misorientations, which must be considered in the perspective of GND density calculation.
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