Abstract
The investigation results of elemental and phase composition, state of defective substructure and microhardness of the surface layer of «film (Ti)/substrate (SiC-ceramics)» system (Ti film 0.5 μm thick was deposited on the surface of SiC-ceramics) subjected to treatment with an intense pulsed low-energy electron beam (15 J/cm2, 200 μs, 0.3 s−1, 20 pulses) are presented. It is shown that irradiation of the «film (Ti)/substrate (SiC-ceramics)» system with an electron beam is accompanied by the formation of multielement multiphase (SiC; TiC; Ti5Si3) surface layer having submicro- and nanocrystalline structure. Microhardness of the irradiated surface layer reaches a value of 74 GPa, that is twice the value of microhardness of SiC-ceramics (36 GPa).
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