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Erbium Related Photoluminescence of Silicon: Influence of Co-doping with Oxygen and Hydrogenation

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, , Citation Aynul Islam and Anika Tasnim Aynul 2021 IOP Conf. Ser.: Mater. Sci. Eng. 1117 012005 DOI 10.1088/1757-899X/1117/1/012005

1757-899X/1117/1/012005

Abstract

This experiment deals with the influence of co-doping with oxygen and hydrogen and also annealing parameters, temperature and excitation power on the Er related photoluminescence (PL) of silicon. The ultimate goal is to optimise the PL intensity of the Er3+ internal transition to make at room-temperature luminescence possible. Silicon is a very inefficient light emitter, because of the low radiative recombination rate due to the indirect band gap. However, by adding optically active impurities such as erbium, Si can be made luminescent. Silicon is an ideal material for the fabrication of optical waveguides that are compatible with optical telecommunication technology at 1.54µm, because of its high transparency and high refractive index at this wavelength. Co-doping with oxygen and hydrogen can enhance the initial Er luminescence. To investigate the influence of oxygen and hydrogen on the diffusion process and the luminescence intensity, samples were doped with erbium, oxygen and hydrogen at different concentrations that were implanted both on Float Zone (FZ) and Czochralski (CZ) silicon wafers. In FZ silicon, the samples implanted with both oxygen and hydrogen showed the highest luminescence yield with a six times higher peak intensity as compared to samples implanted with only erbium and a two times higher peak intensity as compared to samples with erbium and oxygen, in accordance with previous results. However, identified by the line position and contrary to previous results on CZ-Si, the luminescence stems from an erbium-oxygen impurity complex and not from the so-called cubic centre. In CZ samples doped with erbium, oxygen and hydrogen show a 3 times higher intensity as compared to samples doped only with erbium and oxygen. Although the PL lines of the cubic centre are visible, they do not exhibit the strongest luminescence. In samples doped only with erbium and hydrogen and annealed at 900°C, we observe luminescence from only the cubic centre. Although the appearance of the cubic centre in these samples is most likely due to out-diffusion of erbium in the absence of oxygen, hydrogen again enhances the luminescence intensity by a factor 2.

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10.1088/1757-899X/1117/1/012005