The following article is Open access

Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype

, , , , , , , , , , , , , , , , , , , , , , , and

Published 21 July 2016 © CERN 2016
, , Citation M. Benoit et al 2016 JINST 11 P07019 DOI 10.1088/1748-0221/11/07/P07019

1748-0221/11/07/P07019

Abstract

Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.

Export citation and abstract BibTeX RIS

published under the terms of the Creative Commons Attribution 3.0 License by IOP Publishing Ltd and Sissa Medialab srl. Any further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation and DOI.

Please wait… references are loading.
10.1088/1748-0221/11/07/P07019