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Effective mass from microwave photoresistance measurements in GaAs/AlGaAs quantum wells

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, , Citation A T Hatke et al 2013 J. Phys.: Conf. Ser. 456 012040 DOI 10.1088/1742-6596/456/1/012040

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1 School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA

2 Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA

3 Birck Nanotechnology Center, School of Materials Engineering and School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA

4 Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA

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1742-6596/456/1/012040

Abstract

We have performed microwave photoresistance measurements in high mobility GaAs/AlGaAs quantum wells and investigated the value of the effective mass. The effective mass, obtained from the period of microwave-induced resistance oscillations (MIRO), was found to be about 12 % lower than the band mass in GaAs, m*b. In contrast, the measured magneto-plasmon dispersion (MPR) revealed an effective mass which is close to m*b, in accord with previous studies. These findings suggest that, in contrast to MPR, the MIRO dispersion contains corrections due to electron-electron interaction effects.

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10.1088/1742-6596/456/1/012040