Paper

Performance analysis of STT-RAM with cross shaped free layer using Heusler alloys

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© 2016 Chinese Institute of Electronics
, , Citation Tangudu Bharat Kumary et al 2016 J. Semicond. 37 014003 DOI 10.1088/1674-4926/37/1/014003

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bghosh@utexas.edu

Author affiliations

1 Department of Electronics and Communications, Malaviya National Institute of Technology, Jaipur, India

2 Microelectronics Research Center, 10100 Burnet Road, Bldg. 160, University of Texas at Austin, Austin, TX, 78758, USA

3 Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur 208016, India

4 Department of Electronics and Communications, Manipal Institute of Technology, Manipal University, Manipal, India

5 Electronics and Communication Engineering Department, National Institute of Technology, Hamirpur, Himachal Pradesh, India

Dates

  1. Received 28 February 2015
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1674-4926/37/1/014003

Abstract

We have investigated the performance of a spin transfer torque random access memory (STT-RAM) cell with a cross shaped Heusler compound based free layer using micromagnetic simulations. We have designed a free layer using a Cobalt based Heusler compound. Simulation results clearly show that the switching time from one state to the other state has been reduced, also it has been found that the critical switching current density (to switch the magnetization of the free layer of the STT RAM cell) is reduced.

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