The origin of blue photoluminescence from nc-Si/SiO2 multilayers

Ma Zhong-Yuan; Guo Si-Hua; Chen De-Yuan; Wei De-Yuan; Yao Yao; Zhou Jiang; Huang Rui; Li Wei; Xu Jun; Xu Ling; Huang Xin-Fan; Chen Kun-Ji; Feng Duan

doi:10.1088/1674-1056/17/1/053

Chinese Physics B

The origin of blue photoluminescence from nc-Si/SiO₂ multilayers

Ma Zhong-Yuan¹, Guo Si-Hua¹, Chen De-Yuan¹, Wei De-Yuan¹, Yao Yao¹, Zhou Jiang¹, Huang Rui¹, Li Wei¹, Xu Jun¹, Xu Ling¹, Huang Xin-Fan¹, Chen Kun-Ji¹ and Feng Duan¹

2008 Chin. Phys. Soc. and IOP Publishing Ltd
Chinese Physics B, Volume 17, Number 1 Citation Ma Zhong-Yuan et al 2008 Chinese Phys. B 17 303 DOI 10.1088/1674-1056/17/1/053

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zyma@nju.edu.cn

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¹ State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University Nanjing 210093, China

Dates

Received 29 August 2006

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Abstract

Intensive blue photoluminescence (PL) was observed at room temperature from the nanocrystalline-Si/SiO₂ (nc-Si/SiO₂) multilayers (MLs) obtained by thermal annealing of SiO/SiO₂ MLs for the first time. By controlling the size of nc-Si formed in SiO sublayer from 3.5 to 1.5 nm, the PL peak blueshifts from 457 to 411 nm. Combining the analysis of TEM, Raman and absorption measurement, this paper attributes the blue PL to multiple luminescent centres at the interface of nc-Si and SiO₂.

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