Abstract
A closed hydrodynamic approach based on the system of conservation equations for carrier number, drift velocity and mean energy coupled with the Poisson equation is used to calculate the response functions in the time domain of the local electric field and applied voltage for a near-micrometre n+nn+ InP diode. By Fourier analysis, the generation bands in the frequency domain are then obtained. The good agreement achieved with available experiments validates the present theoretical approach. A significant increase of the cut-off frequency of the microwave power generation up to 600-700 GHz is predicted for submicrometre GaAs and InP diodes.
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