Abstract
A study of the transport properties of Schottky barriers to the vacuum- and air-cleaved surfaces of CdS have yielded a wide range of barrier heights which, contrary to popular belief, show no linear correlation with the metal work function. The characteristics have shown a strong dependence on the methods of preparation and subsequent treatment of the diodes. Further investigations using XPS have confirmed that the interfacial chemistry is significant in the Schottky barrier formation process. These results are considered in terms of various Schottky barrier theories and the importance of localised interface states is emphasised.
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