Predicted dose, energy and implantation temperature effects on the residual disorder following the annealing of pre-amorphised silicon

A band of disorder is observed following the annealing of surface amorphous layers produced by ion bombardment. The depth of the band's centre is just below the original amorphous/crystalline interface. The ion bombardment simulation computer program TRIM.CASCADE has been used in conjunction with ion channelling measurements to predict the areal density of atoms available for the formation of this band of disorder. The variation in the amounts of disorder expected due to changing the implantation parameters: ion dose, ion energy and implantation temperature are reported. The predictions are compared with the published transmission electron microscopy results and electrical measurements of other workers. The implications of this work for the technique of pre-amorphisation are also discussed.