Interface roughness and polar optical phonon scattering in RTDs

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Published under licence by IOP Publishing Ltd
, , Citation R Lake et al 1998 Semicond. Sci. Technol. 13 A163 DOI 10.1088/0268-1242/13/8A/046

0268-1242/13/8A/A163

Abstract

The contributions of interface roughness scattering and polar optical phonon scattering to the valley current of resonant tunnelling diodes (RTDs) are theoretically found to be comparable. An RTD design is suggested to experimentally observe the phonon peak which has never been observed in this material system. Such a device will provide a calibration point for the theoretical calculations.

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10.1088/0268-1242/13/8A/046