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The MOSFET Inversion Layer: The Conductivity of a Localized, Highly Correlated Phase

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Published under licence by IOP Publishing Ltd
, , Citation Mats Johnson and G Srinivasan 1978 Phys. Scr. 18 476 DOI 10.1088/0031-8949/18/6/026

1402-4896/18/6/476

Abstract

We propose that the electrons in the localized regime (close to the threshold for metallic conduction) form a highly correlated electron liquid and discuss the a.c.-conductivity of such a liquid. In particular we discuss the d.c.-limit in a Wigner lattice phase. We find that defect migration contributes a term of the form σ = σi exp (-W/kBT) where σi is density dependent in qualitative agreement with experiments on devices with little disorder.

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10.1088/0031-8949/18/6/026