COMMENT AND CORRESPONDENCE

Novel technique of fabricating fine lines with T shaped cross section

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, , Citation A Singh 1982 J. Phys. E: Sci. Instrum. 15 1126 DOI 10.1088/0022-3735/15/10/038

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1 Solid State Devices Div., CEERI, Pilani Raj, India

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0022-3735/15/10/1126

Abstract

Fine lines with T shaped cross sections are a prerequisite for the fabrication of FETs with improved noise, speed and gain performance. This comment describes a novel technique based on the use of treated (Singh 1981) and untreated photoresist layers.

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