Abstract
Quenching from temperatures in the range 500-750 degrees C of high-purity p-type germanium induces a deep hole trapping state at Ev+0.23 eV. This level is also seen in gamma -irradiated samples from the same material, and is tentatively identified as an oxygen-vacancy complex. Quenching from 700 degrees C of copper-doped germanium induces the normal Cu-, Cu2- and Cu-H levels, as well as a deep hole trap at Ev+0.41 eV. Field-assisted emission measurements are consistent with this level being due to triply ionised copper.