This Letter investigates the output power enhancement achieved by tunnel junction insertion into the InGaN multi-quantum well (MQW) active region of a 410 nm vertical-cavity surface-emitting laser which enables the repeated use of carriers for light generation (carrier recycling). While the number of quantum wells remains unchanged, the tunnel junction eliminates absorption caused by the non-uniform MQW carrier distribution. The thermal resistance drops and the excess bias lead to a surprisingly small rise in self-heating.
References
1.
2.
S. C.
Wang
, T. C.
Lu
, and H. C.
Kuo
, “GaN-based VCSELs
,” in VCSELs
, edited by R.
Michalzik
(Springer
, Berlin
, 2013
), Chap. 13.3.
C.
Holder
, J. S.
Speck
, S. P.
DenBaars
, S.
Nakamura
, and D.
Feezell
, Appl. Phys. Express
5
, 092104
(2012
).4.
T. C.
Lu
, C. C.
Kao
, H. C.
Kuo
, G. S.
Huang
, and S. C.
Wang
, Appl. Phys. Lett.
92
, 141102
(2008
).5.
T. C.
Lu
, S. W.
Chen
, T. T.
Wu
, P. M.
Tu
, C. K.
Chen
, C. H.
Chen
, Z. Y.
Li
, H. C.
Kuo
, and S. C.
Wang
, Appl. Phys. Lett.
97
, 071114
(2010
).6.
J.
Piprek
, in Proceedings of the 13th NUSOD Conference, Vancouver, Canada, 2013
(IEEE
, Piscataway
, 2013
), pp. 89
–90
.7.
A.
David
, M. J.
Grundmann
, J. F.
Kaeding
, N. F.
Gardner
, T. G.
Mihopoulos
, and M. R.
Krames
, Appl. Phys. Lett.
92
, 053502
(2008
).8.
J. K.
Kim
, S.
Nakagawa
, E.
Hall
, and L. A.
Coldren
, Appl. Phys. Lett.
77
, 3137
(2000
).9.
Th.
Knödl
, M.
Golling
, A.
Straub
, R.
Jäger
, R.
Michalzik
, and K. J.
Ebeling
, IEEE J. Sel. Top. Quantum Electron.
9
, 1406
(2003
).10.
S. R.
Jeon
, M. S.
Cho
, M. A.
Yu
, and G. M.
Yang
, IEEE J. Sel. Top. Quantum Electron.
8
(4
) 739
–743
(2002
).11.
F.
Akyol
, S.
Krishnamoorthy
, and S.
Rajan
, Appl. Phys. Lett.
103
, 081107
(2013
).12.
J.
Piprek
, Phys. Status Solidi RRL
8
, 424
(2014
).13.
M. C.
Tsai
, B.
Leung
, T. C.
Hsu
, and Y. K.
Kuo
, J. Lightwave Technol.
32
, 1801
(2014
).14.
I.
Ozden
, E.
Makarona
, A. V.
Nurmikko
, T.
Takeuchi
, and M.
Krames
, Appl. Phys. Lett.
79
(16
), 2532
–2534
(2001
).15.
M.
Osinski
, V. A.
Smagley
, G. A.
Smolyakov
, and P. G.
Eliseev
, IEEE J. Sel. Top. Quantum Electron.
7
, 270
(2001
).16.
M.
Streiff
, A.
Witzig
, M.
Pfeiffer
, P.
Royo
, and W.
Fichtner
, IEEE J. Sel. Top. Quantum Electron.
9
, 879
(2003
).17.
P.
Debernardi
, “Three-dimensional modeling of VCSELs
,” in VCSELs
, edited by R.
Michalzik
(Springer
, Berlin
, 2013
), Chap. 3.18.
19.
G. K.
Wachutka
, IEEE Trans. Comput. Aided Des.
9
, 1141
(1990
).20.
J.
Piprek
, Z.-M.
Li
, R.
Farrell
, S. P.
DenBaars
, and S.
Nakamura
, “Electronic properties of InGaN/GaN vertical-cavity lasers
,” in Nitride Semiconductor Devices-Principles and Simulation
, edited by J.
Piprek
(Wiley-VCH
, Weinheim, 2007
), Chap. 19.21.
J.
Piprek
and S.
Nakamura
, IEE Proc.: Optoelectron.
149
, 145
(2002
).22.
T. C.
Lu
, T. T.
Wu
, S. W.
Chen
, P. M.
Tu
, Z. Y.
Li
, C. K.
Chen
, C. H.
Chen
, H. C.
Kuo
, S. C.
Wang
, H. W.
Zan
, and C. Y.
Chang
, IEEE J. Sel. Top. Quantum Electron.
17
, 1594
(2011
).23.
E.
Kioupakis
, P.
Rinke
, K. T.
Delaney
, and Ch. G. Van de
Walle
, Appl. Phys. Lett.
98
, 161107
(2011
).24.
J.
Piprek
, Semiconductor Optoelectronic Devices
(Academic Press
, San Diego
, 2003
), p. 56
.25.
C.-Y.
Huang
, Y. D.
Lin
, A.
Tyagi
, A.
Chakraborty
, H.
Ohta
, J. S.
Speck
, S. P.
DenBaars
, and S.
Nakamura
, J. Appl. Phys.
107
, 023101
(2010
).© 2014 AIP Publishing LLC.
2014
AIP Publishing LLC
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