A controlled biaxial stress field generated in a ball-on-ring configuration was applied on a thin hexagonal (0001)AlN film grown on (001)Si substrate, and the phonon deformation potential (PDP) constants of the A1 (TO), E2 (high), and A1 (LO) Raman modes were retrieved from the respective spectral shifts. Measurements were done: (i) at given fixed locations upon increasing the externally applied load; and (ii) along spectral line scans performed at a fixed load. The reliability of the retrieved PDP values, in comparison with values previously reported in the literature, was examined by a further evaluation of the residual stress field stored in the AlN/Si system associated with the tip of a crack propagated from the corner of a pyramidal indentation. The PDP assessments were confirmed to be reliable owing to a close correspondence among stress intensity factors independently retrieved from different Raman bands.
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15 November 2012
Research Article|
November 27 2012
Raman spectroscopic calibrations of phonon deformation potentials in wurtzitic AlN
Wenliang Zhu;
Wenliang Zhu
1
Ceramic Physics Laboratory, Kyoto Institute of Technology
, Matsugasaki, Sakyo-ku, 606-8585 Kyoto, Japan
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Andrea Leto;
Andrea Leto
2
Piezotech Japan Ltd.
, Mukaihata-cho 4, Ichijoji, Sakyo-ku, 606-8326 Kyoto, Japan
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Ken-ya Hashimoto;
Ken-ya Hashimoto
3Department of Electrical and Electronic Engineering,
Chiba University
, Yayoi-cho 1-33, Inage-ku, 263-8522 Chiba, Japan
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Giuseppe Pezzotti
Giuseppe Pezzotti
a)
1
Ceramic Physics Laboratory, Kyoto Institute of Technology
, Matsugasaki, Sakyo-ku, 606-8585 Kyoto, Japan
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a)
Electronic mail: pezzotti@kit.ac.jp.
J. Appl. Phys. 112, 103526 (2012)
Article history
Received:
September 18 2012
Accepted:
October 31 2012
Citation
Wenliang Zhu, Andrea Leto, Ken-ya Hashimoto, Giuseppe Pezzotti; Raman spectroscopic calibrations of phonon deformation potentials in wurtzitic AlN. J. Appl. Phys. 15 November 2012; 112 (10): 103526. https://doi.org/10.1063/1.4768208
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