Backscattering and channeling‐effect measurements with 2.5‐MeV helium ions and measurements of the position of the infrared reflectivity plasma edge were used to investigate the absolute concentration of Te, the percentage of Te on lattice sites, and the free‐carrier concentration in GaAs doped with [Te] ≈ 1019 cm−3 as a function of anneal. A 700°C anneal produced a reduction in carrier concentration [ne] by 20±2% (from the preanneal value of 5×1018 cm−3), and in the fraction of Te atoms on lattice sites. After an anneal at 1100°C, followed by quenching, [ne] rose to 7×1018 cm−3 while the Te distribution reverted to the original highly substitutional form. Throughout the experiment no measurable change from [Te]=9×1018 cm−3 was found. The correlations are discussed and related to existing models for anneal‐dependent complexes.
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September 1971
Research Article|
September 01 1971
Investigation of Te‐Doped GaAs Annealing Effects by Optical‐ and Channeling‐Effect Measurements
I. V. Mitchell;
I. V. Mitchell
California Institute of Technology, Pasadena, California 91109
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J. W. Mayer;
J. W. Mayer
California Institute of Technology, Pasadena, California 91109
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J. K. Kung;
J. K. Kung
University of Southern California, Los Angeles, California 90007
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W. G. Spitzer
W. G. Spitzer
University of Southern California, Los Angeles, California 90007
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J. Appl. Phys. 42, 3982–3987 (1971)
Article history
Received:
December 17 1970
Citation
I. V. Mitchell, J. W. Mayer, J. K. Kung, W. G. Spitzer; Investigation of Te‐Doped GaAs Annealing Effects by Optical‐ and Channeling‐Effect Measurements. J. Appl. Phys. 1 September 1971; 42 (10): 3982–3987. https://doi.org/10.1063/1.1659714
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