1550 nm GaInNAsSb distributed feedback laser diodes on GaAs
Singlemode laser diodes on GaAs substrates were developed using GaInNAsSb double quantum well active regions grown by molecular beam epitaxy. The distributed feedback devices were fabricated using a regrowth-free process in which lateral Cr gratings were deposited adjacent to a dry-etched narrow ridge waveguide. In continuous-wave (CW) operation the devices exhibit a lasing wavelength of 1550 nm at 10°C with a very high sidemode suppression ratio of >50 dB throughout most of the operational range, and output power up to 15 mW.