Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

1550 nm GaInNAsSb distributed feedback laser diodes on GaAs

1550 nm GaInNAsSb distributed feedback laser diodes on GaAs

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Singlemode laser diodes on GaAs substrates were developed using GaInNAsSb double quantum well active regions grown by molecular beam epitaxy. The distributed feedback devices were fabricated using a regrowth-free process in which lateral Cr gratings were deposited adjacent to a dry-etched narrow ridge waveguide. In continuous-wave (CW) operation the devices exhibit a lasing wavelength of 1550 nm at 10°C with a very high sidemode suppression ratio of >50 dB throughout most of the operational range, and output power up to 15 mW.

References

    1. 1)
    2. 2)
    3. 3)
    4. 4)
    5. 5)
    6. 6)
      • Gupta, J.A., Barrios, P.J., Pakulski, G., Aers, G.C., Caballero, J.A., Poitras, D., Wu, X.: `Properties of GaInNAsSb narrow ridge waveguide laser diodes in continuous-wave operation at 1.55 µm', SPIE Proc. Photonics West 2007, p. 6485–27.
    7. 7)
http://iet.metastore.ingenta.com/content/journals/10.1049/el_20080479
Loading

Related content

content/journals/10.1049/el_20080479
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address