Thermal effects in HBT emitter resistance extraction

G. Hanington; C.E. Chang; P.J. Zampardi; P.M. Asbeck

Thermal effects in HBT emitter resistance extraction

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Thermal effects in HBT emitter resistance extraction

Author(s): G. Hanington ; C.E. Chang ; P.J. Zampardi ; P.M. Asbeck
DOI: 10.1049/el:19961017

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Author(s): G. Hanington ¹ ; C.E. Chang ² ; P.J. Zampardi ² ; P.M. Asbeck ¹
- Affiliations: 1: Department of Electrical and Computer Engineering, University of California, San Diego, USA
  2: Department of Electrical and Computer Engineering, Rockwell International Science Center, Thousand Oaks, USA
Source: Volume 32, Issue 16, 1 August 1996, p. 1515 – 1516
DOI: 10.1049/el:19961017 , Print ISSN 0013-5194, Online ISSN 1350-911X

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It is shown that device self-heating effects introduce a significant error in the determination of emitter resistance in AlGaAs/GaAs HBTs by the common technique of extrapolating 1/g_m against 1/I_c (where g_m is the observed device transconductance). An approximate expression for the error is given, and an improved technique for R_e extraction is presented.

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Thermal effects in HBT emitter resistance extraction

Thermal effects in HBT emitter resistance extraction

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