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Volterra series based nonlinear simulation of HBTs using analytically extracted models

Volterra series based nonlinear simulation of HBTs using analytically extracted models

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An accurate HBT large signal model has been developed using an analytical equivalent circuit element extraction technique. Nonlinear characteristics are analysed by means of a Volterra series and agree with experiment. Nonlinear current cancellation effects can be analysed. Their presence also enhances convergence and the applicability of Volterra series to large-signal modelling.

Inspec keywords: semiconductor device models; bipolar transistors; S-parameters; nonlinear network analysis; equivalent circuits; series (mathematics)

Other keywords: HBT; heterojunction bipolar transistors; Volterra series; nonlinear current cancellation effects; S-parameters; semiconductor device models; nonlinear characteristics; large-signal modelling; convergence; equivalent circuit; nonlinear simulation; analytically extracted models

Subjects: Bipolar transistors; Semiconductor device modelling, equivalent circuits, design and testing

References

    1. 1)
      • D.R. Pehlke , D. Pavlidis . Evaluation of the factors determining HBT high-frequency performanceby direct analysis of S-parameter data. IEEE Trans. , 12 , 2367 - 2373
    2. 2)
      • A. Samelis , D. Pavlidis . Mechanisms determining third order intermodulation distortion in AlGaAs/GaAsheterojunction bipolar transistors. IEEE Trans. , 12 , 2374 - 2380
    3. 3)
      • J.J. Bussgang , L. Ehrman , J.W. Graham . Analysis of nonlinear systems with multiple inputs. Proc. IEEE , 8 , 1088 - 1119
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