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Scanning the laser gain spectrum using distributed feedback and hydrostatic pressure

Scanning the laser gain spectrum using distributed feedback and hydrostatic pressure

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© The Institution of Electrical Engineers
Published

High-pressure measurements on distributed-feedback GaxIn1-xASyP1-y lasers allow the gain spectrum to be scanned, providing a powerful tool for the study of the intrinsic properties of the laser, including the mechanisms responsible for the high-temperature sensitivity.

Inspec keywords: high-pressure effects in solids; semiconductor junction lasers; distributed feedback lasers; indium compounds; laser variables measurement; gallium arsenide; gallium compounds; III-V semiconductors

Other keywords: high-temperature sensitivity; threshold current; DFB lasers; pressure dependent pressure; intrinsic properties; distributed feedback lasers; GaxIn1-xAsyP1-y lasers; III-V semiconductors; hydrostatic pressure; laser gain spectrum

Subjects: Lasing action in semiconductors; Optical variables measurement; II-VI and III-V semiconductors; Laser beam characteristics and interactions; Semiconductor lasers

References

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      • D. Patel , A.R. Adams , P.D. Greene , G.D. Henshall . Influence of pressure on temperature sensitivity of GaxIn1−xASyP1−y lasers. Electron. Lett. , 919 - 920
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      • C.J. Armistead , S.A. Wheeler , R.G. Plumb , R.W. Musk . Low-threshold ridge waveguide lasers at λ = 1.5 μm. Electron. Lett. , 1145 - 1147
    3. 3)
      • D. Patel , A.R. Adams , P.D. Greene , G.D. Henshall . Pressure dependence of threshold current in Gaxn1−xASyP1−y lasers. Electron. Lett. , 527 - 528
    4. 4)
      • K.C. Heasman , A.R. Adams , P.D. Greene , G.D. Henshall . Pressure dependence of the threshold current and carrier lifetime in 1.55μm GaInAsP lasers. Electron. Lett. , 492 - 493
    5. 5)
      • G.N. Childs , S. Brand , R.A. Abram . Intervalence band absorption in semiconductor laser materials. Semicond. Sci. Technol. , 116 - 120
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      • C.K. Sarkar , R.J. Nicholas , J.C. Portal , M. Razeghi , J. Chevier , J. Massies . Effective masses and non-parabolicity in GaxIn1−xAs. J. Phys. C , 2667 - 2676
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