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  • Author(s): Xiarong Hu 1
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    • Affiliations: 1: School of Microelectronics and Solid-state Electronics, University of Electronic Science and Technology of China, People's Republic of China
  • Source: Volume 48, Issue 19, 13 September 2012, page 1170
    DOI:  10.1049/el.2012.3086 , Print ISSN 0013-5194, Online ISSN 1350-911X
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Dr Xiarong Hu from the University of Electronic Science and Technology of China talks about the research behind his Letter ‘SOI LDMOS with variable-k dielectric trench’ on page 1235.

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SOI LDMOS with variable-k dielectric trench
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