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Transistor mismatch in 32 nm high-k metal-gate process

Transistor mismatch in 32 nm high-k metal-gate process

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Transistor mismatch data and analysis from state-of-the-art high-k/metal-gate (HKMG) technology are presented. By normalising mismatch data against oxide thickness (TINV), threshold voltage (VTH), and effective work function, direct comparison of VTH mismatch from various device types is made. It is quantitatively demonstrated that effective work function variation (EWFV) does not generate significant VTH variability in the present HKMG technology.

Inspec keywords: field effect transistors

Other keywords: mismatch data; threshold voltage; oxide thickness; HKMG technology; size 32 nm; transistor mismatch; effective work function variation; high-k metal-gate process

Subjects: Insulated gate field effect transistors

References

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