Sub-terahertz testing of silicon MOSFET
Sub-terahertz testing of silicon MOSFET
- Author(s): W. Stillman ; D. Veksler ; T.A. Elkhatib ; K. Salama ; F. Guarin ; M.S. Shur
- DOI: 10.1049/el:20089418
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- Author(s): W. Stillman 1 ; D. Veksler 1 ; T.A. Elkhatib 1 ; K. Salama 1 ; F. Guarin 2 ; M.S. Shur 1
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View affiliations
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Affiliations:
1: Department of ECSE, Rensselaer Polytechnic Institute, Troy, USA
2: Department of ECSE, IBM Microelectronics, Hopewell Junction, USA
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Affiliations:
1: Department of ECSE, Rensselaer Polytechnic Institute, Troy, USA
- Source:
Volume 44, Issue 22,
23 October 2008,
p.
1325 – 1327
DOI: 10.1049/el:20089418 , Print ISSN 0013-5194, Online ISSN 1350-911X
The difference in the terahertz response of Si MOSFETs with identical above threshold characteristics but different values of the leakage current in the below threshold regime is demonstrated. The results show that the terahertz response test can be used as a complementary testing technique of a Si MOS VLSI under bias.
Inspec keywords: leakage currents; elemental semiconductors; submillimetre waves; silicon; MOSFET
Other keywords:
Subjects: Insulated gate field effect transistors
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