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1.55 μm multisection ridge lasers

1.55 μm multisection ridge lasers

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© The Institution of Electrical Engineers
Published

A new 1.55 μm wavelength GaInAsP laser is described: the multisection ridge laser. Pulsed thresholds were typically 40–80 mA. CW thresholds were comparable. The lowest measured CW threshold was 38 mA at 12°C. The laser operated stably in a single longitudinal mode (spurious modes down by −16 dB) under fast pulse modulation with a prebias below threshold. Theoretical results based on a waveguide scattering theory are in qualitative agreement with the experimental results.

Inspec keywords: indium compounds; gallium arsenide; semiconductor junction lasers; III-V semiconductors

Other keywords: CW thresholds; waveguide scattering theory; fast pulse modulation; 1.55 micron wavelength; pulsed thresholds; semiconductor laser; single longitudinal mode; multisection ridge lasers; GaInAsP laser

Subjects: Lasing action in semiconductors; Semiconductor lasers; Design of specific laser systems

References

    1. 1)
      • O. Mikami , T. Saitoh , H. Nakagome . 1.5 μm GaInAsP/InP distributed Bragg reflector lasers with built-in optical waveguide. Electron. Lett. , 458 - 460
    2. 2)
      • L.A. Coldren , K.J. Ebeling , B.I. Miller , J.A. Rentschler . Single longitudinal mode operation of two-section GaInAsP InP lasers under pulsed excitation. J. Quantum Electron.
    3. 3)
      • I.P. Kaminow , R.E. Nahory , M.A. Pollack , L.W. Stulz , J.C. Dewinter . Single-mode CW ridge-waveguide laser emitting at 1.55 μm. Electron. Lett. , 763 - 764
    4. 4)
      • K.J. Ebeling , L.A. Coldren . Analysis of multi-element semiconductor lasers. J. Appl. Phys.
    5. 5)
      • K.J. Ebeling , L.A. Coldren , B.I. Miller , J.A. Rentschler . Single-mode operation of coupled-cavity, GaInAsP/InP semiconductor lasers. Appl. Phys. Lett. , 6 - 8
    6. 6)
      • Y. Abe , K. Kishino , T. Tanbun-Ek , S. Arai , F. Koyama , K. Matsu-Moto , T. Watanabe , Y. Suematsu . Room-temperature CW operation of 160 μm GaInAsP InP buried-heterostructure integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide. Electron. Lett. , 410 - 411
    7. 7)
      • K.R. Preston , K.C. Wollard , K.H. Cameron . External cavity controlled single longitudinal mode laser transmitter module. Electron. Lett. , 932 - 933
    8. 8)
      • K. Utaka , S. Akiba , K. Sakai , Y. Matsushima . Roomtemperature CW operation of distributed-feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 μm. Electron. Lett. , 961 - 963
    9. 9)
      • T.P. Lee , C.A. Burrus , J.A. Copeland , A.G. Dental , D. Marcuse . Short-cavity InGaAsP injection lasers dependence of mode spectra and single-longitudinal mode power on cavity length. J. Quantum Electron. , 1101 - 1112
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